The transfer-impedance method for noise in field-effect transistors
- 1 March 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (3) , 233-236
- https://doi.org/10.1016/0038-1101(79)90026-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Generation-recombination noise at 77°K in silicon bars and JFETsSolid-State Electronics, 1979
- Theory of generation-recombination noise in the channel of junction field-effect transistorsIEEE Transactions on Electron Devices, 1975
- Noise in single injection diodes. I. A survey of methodsJournal of Applied Physics, 1975
- 1/ƒ noise is no surface effectPhysics Letters A, 1969