SiO diffusion during thermal decomposition of SiO2
- 15 May 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (10) , 6194-6196
- https://doi.org/10.1063/1.345185
Abstract
Chemically prepared thin oxide films were decomposed in an ultrahigh vacuum at temperatures of between 760 and 850 °C. By measuring the remaining oxide thickness as a function of time we could extract the diffusion coefficient of SiO in SiO2. This was determined to be D(cm2/s)=1.48×10−3exp(−3.2 eV/kT). The results are discussed in respect to an appropriate heat cleaning of wafers in a Si‐molecular‐beam epitaxial system.This publication has 11 references indexed in Scilit:
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