Diffusion Control of Dopant from Heavily Se Doped n Type GaAs Layers Grown by Molecular Layer Epitaxy

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Abstract
Properties of GaAs grown by molecular layer epitaxy are strongly influenced by surface stoichiometry during growth. In molecular layer epitaxy, Se is introduced for the heavily doped n ++ layers for device applications. In such layers, Se exists as an interstitial atom and behaves as a diffusion source. In the growth process, the diffusion of doped Se into GaAs is affected by the supply pressure of AsH3; a higher amount of AsH3 supplied during the growth of the undoped layer in an n ++-i structure reduces the diffusion of Se. A lower amount of AsH3 supplied during the growth of the n ++ layer reduces the diffusion of Se from the n ++ layer to the i layer. The stoichiometry in i and n ++ layers affects the diffusion of interstitial Se in different manners.