In-situ optical monitoring of pyrolysis process on substrate surface in GaAs MOCVD
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 353-358
- https://doi.org/10.1016/0022-0248(91)90767-y
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-AbsorptionJapanese Journal of Applied Physics, 1990
- Pyrolysis of trimethylgallium on GaAs(100) surfacesApplied Physics Letters, 1990
- Spectral Dependence of Optical Reflection during Flow-Rate Modulation Epitaxy of GaAs by the Surface Photo-Absorption MethodJapanese Journal of Applied Physics, 1990
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption MethodJapanese Journal of Applied Physics, 1990
- In Situ Optical Monitoring of the GaAs Growth Process in MOCVDJapanese Journal of Applied Physics, 1990
- Optical Investigation on the Growth Process of GaAs during Migration-Enhanced EpitaxyJapanese Journal of Applied Physics, 1989
- Direct observation of GaAs atomic layer epitaxy by reflection high-energy electron diffractionApplied Physics Letters, 1989
- The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and ArsineJapanese Journal of Applied Physics, 1989
- I n s i t u x-ray photoelectron spectroscopic study of GaAs grown by atomic layer epitaxyApplied Physics Letters, 1989
- Effect of exposure to group III alkyls on compound semiconductor surfaces observed by x-ray photoelectron spectroscopyJournal of Crystal Growth, 1989