I n s i t u x-ray photoelectron spectroscopic study of GaAs grown by atomic layer epitaxy
- 13 February 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (7) , 656-657
- https://doi.org/10.1063/1.100909
Abstract
We carried out an in situ investigation of GaAs grown by atomic layer epitaxy, using an x‐ray photoelectron spectroscopy system combined with a metalorganic vapor phase epitaxial growth chamber, where Ga(CH3)3 and AsH3 were the source gases. It has been proved that Ga(CH3)n molecules (where n=1 or 2) are decomposed into Ga atoms after being adsorbed on the GaAs surface around 500 °C. This means that the self‐limited adsorption of Ga in the atomic layer epitaxy of GaAs can be achieved on the surface where the Ga adsorbate is atomic Ga.Keywords
This publication has 7 references indexed in Scilit:
- New approach to the atomic layer epitaxy of GaAs using a fast gas streamApplied Physics Letters, 1988
- GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxyApplied Physics Letters, 1987
- Mechanism of surface reaction in GaAs layer growthSurface Science, 1987
- Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxyApplied Physics Letters, 1986
- GaAs Atomic Layer Epitaxy by Hydride VPEJapanese Journal of Applied Physics, 1986
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985