Study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium by reflectance difference spectroscopy and mass spectroscopy
- 1 March 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 225 (1-2) , 12-16
- https://doi.org/10.1016/0040-6090(93)90119-a
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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