Reflectance-difference spectroscopy study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium and tertiarybutylarsine
- 20 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (20) , 2261-2263
- https://doi.org/10.1063/1.104916
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Studies of TMGa adsorption on thin GaAs and InAs (001) layersJournal of Crystal Growth, 1990
- Reflectance-difference detection of growth oscillationsJournal of Crystal Growth, 1990
- Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasersApplied Physics Letters, 1990
- Decomposition of trimethylgallium on the gallium-rich GaAs (100) surface: Implications for atomic layer epitaxyApplied Physics Letters, 1990
- Pyrolysis of trimethylgallium on GaAs(100) surfacesApplied Physics Letters, 1990
- RHEED and XPS observations of trimethylgallium adsorption on GaAs (001) surfaces—Relevance to atomic layer epitaxyJournal of Electronic Materials, 1990
- Direct optical measurement of surface dielectric responses: Interrupted growth on (001) GaAsPhysical Review Letters, 1990
- Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAsJournal of Vacuum Science & Technology A, 1988
- Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)Physical Review Letters, 1987
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985