GaAs growth by atomic layer epitaxy using diethylgalliumchloride
- 4 January 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (1) , 27-29
- https://doi.org/10.1063/1.99306
Abstract
GaAs is grown by metalorganic atomic layer epitaxy (MOALE) using diethylgalliumchloride (DEGaCl) as a new MO source material for ALE and AsH3 in a horizontal, low‐pressure metalorganic chemical vapor deposition system. Monolayer‐unit growth has been obtained over a wide range of growth conditions, including growth temperature and the time of substrate exposure to DEGaCl. This ALE process is called ‘‘digital epitaxy,’’ and its advantages may be seen in its successful application here to extremely uniform GaAs growth on a 3‐in. GaAs wafer. The digital nature of GaAs growth is well explained here using a Langmuir monolayer adsorption model for GaCl, a stable decomposition product of DEGaCl. Growth at higher temperatures leads to a reduction of carbon contamination; and at 600 °C, n‐type layers with a 77 K mobility of 22 400 cm2/V s are obtained.Keywords
This publication has 13 references indexed in Scilit:
- Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxyApplied Physics Letters, 1986
- Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxyApplied Physics Letters, 1986
- Improved uniformity of epitaxial indium-based compounds by atomic layer epitaxyApplied Physics Letters, 1986
- Self-limiting mechanism in the atomic layer epitaxy of GaAsApplied Physics Letters, 1986
- Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation EpitaxyJapanese Journal of Applied Physics, 1986
- Photostimulated molecular layer epitaxyJournal of Vacuum Science & Technology A, 1986
- GaAs Atomic Layer Epitaxy by Hydride VPEJapanese Journal of Applied Physics, 1986
- Flow-Rate Modulation Epitaxy of GaAsJapanese Journal of Applied Physics, 1985
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985