High-energy stimulated emission in GaAs quantum wells coupled with (Si2)x(GaAs)1−x barriers (ℏω≳E L, E X)
- 7 April 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (14) , 943-945
- https://doi.org/10.1063/1.96666
Abstract
Data are presented showing that a small GaAs quantum well (Lz≊80 Å), the middle third of which is replaced with a (Si2)x(GaAs)1−x ‘‘barrier’’ (27 Å, x≳0.2), is capable of stimulated emission (77 K) at energies ℏω≳EL(Si+GaAs), EX(Si+GaAs).Keywords
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