Electronic structure and jumping magnetization of quantum wells in tilted magnetic fields
- 21 October 1991
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 3 (42) , 8237-8246
- https://doi.org/10.1088/0953-8984/3/42/018
Abstract
The energy spectrum the density of states, the electron probability distributions and the magnetization of a Ga1-xAlxAs-GaAs-Ga1-xAlxAs quantum well in strong tilted magnetic fields B=(Bx,0,Bz) are calculated. It is shown that the spectrum and the probability densities of the states bound in the quantum well would change little if the coupling Hamiltonian approximately=BxBz were to be neglected. Localized states appear above the barrier edge. The magnetization parallel to the layer interfaces exhibits oscillations and sharp jumps as a function of the chemical potential. It remains to be seen whether these jumps may serve as the basis for a dissipation free switching device.Keywords
This publication has 6 references indexed in Scilit:
- Energy spectrum and barrier localization of quantum well electrons in parallel magnetic fieldsJournal of Physics: Condensed Matter, 1991
- Oscillating magnetization of quantum-well electrons in a parallel magnetic fieldPhysical Review B, 1988
- Magnetic interface states between materials of different effective massesJournal of Physics C: Solid State Physics, 1988
- Landau levels near an ideal interfaceJournal of Physics C: Solid State Physics, 1987
- Electron transport and band structure ofalloysPhysical Review B, 1980
- Electronic structure based on the local atomic environment for tight-binding bandsJournal of Physics C: Solid State Physics, 1972