Design and Modeling Considerations for Fully-Integrated Silicon W-Band Transceivers
- 1 December 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper presents circuit design methodologies, modeling techniques, and circuit architectures for silicon transceivers above 77 GHz. The architectures of three existing CMOS and SiGe BiCMOS receivers and transceivers are compared to demonstrate the variety of choices available to the circuit designer, and to highlight design challenges that arise in transceivers above 77 GHz. A comparison of 65 nm CMOS and 130 nm SiGe BiCMOS circuits illustrates the suitability of both technologies in W-Band systems. Inductor and transformer scaling is demonstrated beyond 160 GHz, and the extension of an existing modeling technique for inductors is shown to accurately model transformers and transmission lines. The optimum biasing of power amplifiers is investigated in CMOS and SiGe HBT technologies.Keywords
This publication has 24 references indexed in Scilit:
- A High-Gain, Low-Noise, +6dBm PA in 90nm CMOS for 60-GHz RadioPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- Towards a sub-2.5V, 100-Gb/s Serial TransceiverPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- CMOS SOCs at 100 GHz: System Architectures, Device Characterization, and IC Design ExamplesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Transmitter and Local LO-Path Phase ShiftingIEEE Journal of Solid-State Circuits, 2006
- A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Receiver and AntennasIEEE Journal of Solid-State Circuits, 2006
- Low-Power, Low-Phase Noise SiGe HBT Static Frequency Divider Topologies up to 100 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in SiliconIEEE Journal of Solid-State Circuits, 2006
- A 77 GHz SiGe sub-harmonic balanced mixerIEEE Journal of Solid-State Circuits, 2005
- A low-noise amplifier at 77 GHz in SiGe:C bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- 86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003