GaAlAs/GaAs metamorphic Bragg mirror for long wavelengthVCSELs
- 5 February 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (3) , 268-270
- https://doi.org/10.1049/el:19980117
Abstract
A high reflectivity GaAs/AlGaAs Bragg mirror (> 99.7%) has been grown for the first time on InP. Dislocations present in the metamorphic material do not propagate to the active layer. The metamorphic mirror offers a promising alternative to wafer fusion for long wavelength surface-emitting lasers.Keywords
This publication has 5 references indexed in Scilit:
- Low-threshold proton-implanted 1.3-μm vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrorsIEEE Photonics Technology Letters, 1997
- Gas-source molecular-beam epitaxy and optical characterisation of highly-reflective InGaAsP/InP multilayer Bragg mirrors for 1.3 µm vertical-cavity lasersElectronics Letters, 1997
- High reflectivity, low resistance Te doped AlGaAsSb/AlAsSbBragg mirrorElectronics Letters, 1997
- Room-temperature pulsed operation of 1.5-μm vertical cavity lasers with an InP-based Bragg reflectorIEEE Photonics Technology Letters, 1996
- Submilliamp long wavelength vertical cavity lasersElectronics Letters, 1996