Simulation of the long-period conductivity relaxation (LCR) phenomenon in double-layer semiconductor structures
- 16 July 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 36 (1) , 53-60
- https://doi.org/10.1002/pssa.2210360105
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Role of surface band bending in residual conductivity formation in epitaxial GaAs filmsPhysica Status Solidi (a), 1975
- Recombination in amorphous arsenic triselenidePhysica Status Solidi (a), 1974
- A doped highly compensated crystal semiconductor as a model of amorphous semiconductorsPhysica Status Solidi (a), 1973
- Infrared Properties of Gold in GermaniumPhysical Review B, 1960