Heat treatment of semi-insulating InP:Fe with phosphosilicate glass encapsulation
- 15 May 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (10) , 3756-3759
- https://doi.org/10.1063/1.332929
Abstract
Photoluminescence and Raman scattering characterization measurements were performed on semi‐insulating InP:Fe (100) samples heat treated with phosphosilicate glass (PSG) protective layers. Photoluminescence spectra of PSG encapsulated InP samples indicated that native phosphorus vacancies were reduced in these samples following heat treatment. The presence of a TO phonon line in Raman spectra, which is related to a modification of structual bonding, was observed in InP samples heat treated with an SiO2 layer, while the absence of this TO phonon line was observed in InP heat treated with the PSG layer. Activation of Si implanted into the InP:Fe samples increased with increasing phosphorus concentration in the PSG layers which were used as protective layers for the post ion‐implantation annealing.This publication has 16 references indexed in Scilit:
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