Chemical Etching of Germanium with H3PO4–H2O2–H2O Solution
- 1 November 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (11R)
- https://doi.org/10.1143/jjap.21.1616
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Fully ion-implanted p+-n germanium avalanche photodiodesApplied Physics Letters, 1981
- A New Etching Solution System, H 3 PO 4 ‐ H 2 O 2 ‐ H 2 O , for GaAs and Its KineticsJournal of the Electrochemical Society, 1978
- The Chemical Polishing of GermaniumJournal of the Electrochemical Society, 1962
- Effect of Various Etches on Recombination Centers at Germanium SurfacesJournal of the Electrochemical Society, 1959
- A Study of the Etching Rate of Single-Crystal GermaniumJournal of the Electrochemical Society, 1955