Delineation of semiconductor doping by scanning resistance microscopy
- 17 January 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (3) , 342-344
- https://doi.org/10.1063/1.111169
Abstract
A new technique for the two‐dimensional delineation of P‐N junctions is presented using a scanning resistance microscope (SRM). The SRM uses a conducting probe to perform localized resistance measurements over a surface. These measurements are used to delineate between regions of different doping type and concentration. By using contact forces of 10−4 N, the contact area is estimated to be 30 nm. Experiments have shown the SRM capable of junction delineation with a lateral spacial resolution of less than 35 nm. In addition, during resistance measurements the SRM performs simultaneous surface topography measurements.Keywords
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