Two-dimensional imaging of cleaved Si p-n junctions with 30-nm resolution using a UHV scanning tunneling microscope
- 1 August 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (8) , 422-424
- https://doi.org/10.1109/55.119152
Abstract
The first two-dimensional scanning tunneling microscope (STM) measurements on cleaved shallow silicon p-n junctions are presented. The current imaging technique provides contrast between p- and n-type regions on biased junctions. The two-dimensional part of the junction is imaged and localized to within 30 nm. Both the cleaving of the junction and the STM measurements are performed in ultrahigh vacuum (UHV).Keywords
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