Formation of Ferroelectric BaMgF4 Films on GaAs Substrates
- 1 September 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (9S)
- https://doi.org/10.1143/jjap.31.3232
Abstract
Optimum conditions to form ferroelectric BaMgF4 films on GaAs substrates are investigated. It has been found in vacuum evaporation of BaMgF4 sources that combination of low-temperature deposition and subsequent high-temperature annealing is effective for forming BaMgF4 films that do not contain BaF2 and MgF2 crystallites. The optimum deposition and annealing temperatures obtained thus far are 300°C and 600°C, respectively. Crystallinity and electrical properties of the optimum films are characterized.Keywords
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