Nitrogen passivation by implantation-induced point defects in 4H–SiC epitaxial layers

This publication has 13 references indexed in Scilit:

• Nitrogen deactivation by implantation-induced defects in 4H–SiC epitaxial layers
  Applied Physics Letters, 2001
• Pseudodonor nature of the DI defect in 4H-SiC
  Applied Physics Letters, 2001
• Dissociation energy of the passivating hydrogen-aluminum complex in 4H-SiC
  Materials Science Forum, 2000
• Electric-field-assisted migration and accumulation of hydrogen in silicon carbide
  Physical Review B, 2000
• Low-dose ion implanted epitaxial 4H–SiC investigated by deep level transient spectroscopy
  Physica B: Condensed Matter, 1999
• Ion implantation induced defects in epitaxial 4H–SiC
  Materials Science and Engineering: B, 1999
• Growth of SiC by ?Hot-Wall? CVD and HTCVD
  Physica Status Solidi (b), 1997
• Generation of vacancy-type point defects in single collision cascades during swift-ion bombardment of silicon
  Physical Review B, 1997
• Influence of polytypism on thermal properties of silicon carbide
  Physical Review B, 1996
• A Monte Carlo computer program for the transport of energetic ions in amorphous targets
  Nuclear Instruments and Methods, 1980