Photoluminescence from Si/Ge superlattices
- 22 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (4) , 340-342
- https://doi.org/10.1063/1.102802
Abstract
We have studied the luminescence of short-period Si/Ge superlattices of varying composition grown on a Si1−xGex alloy buffer layer. X-ray diffraction and Rutherford backscattering were used to analyze the composition of the samples. Luminescence bands at 1.5 and 1.6 μm originate from the superlattice, as is indicated by etching experiments. A strong change in luminescence intensity is observed as the composition and strain of the superlattice vary.Keywords
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