Nitridation of GaAs single crystal surfaces using hydrazoic acid and 308 nm photon beams

This publication has 37 references indexed in Scilit:

• Ammonia plasma passivation of GaAs in downstream microwave and radio-frequency parallel plate plasma reactors
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
• Laser-induced interaction of ammonia with GaAs(100). I. Dissociation and nitridation
  The Journal of Chemical Physics, 1992
• Epitaxial growth of alkaline earth fluoride films on HF-treated Si and (NH4)2Sx-treated GaAs without in situ cleaning
  Applied Physics Letters, 1992
• Over-passivation of sulfur treated AlGaAs/GaAs heterojunction bipolar transistors
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
• Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds
  Applied Physics Letters, 1989
• Metal-Dependent Schottky Barrier Height with the (NH₄)₂S_x-Treated GaAs
  Japanese Journal of Applied Physics, 1988
• The Effect of (NH₄)₂S Treatment on the Interface Characteristics of GaAs MIS Structures
  Japanese Journal of Applied Physics, 1988
• Nearly ideal electronic properties of sulfide coated GaAs surfaces
  Applied Physics Letters, 1987
• Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
  Applied Physics Letters, 1987
• Direct variation of metal-GaAs Schottky barrier height by the influence of interface S, Se, and Te
  Applied Physics Letters, 1985