Ohmic contacts to p- and n-type GaSb
- 1 February 1983
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 54 (2) , 247-254
- https://doi.org/10.1080/00207218308938720
Abstract
Several metallization systems for producing ohmic contacts to p- and n-type gallium antimonide (GaSb) with (100) orientation have been investigated. The surface preparation before contact metallization deposition, dependence on alloying temperature and on carrier concentration and the results of contact resistivity evaluations are described. Futhermore, some applications of ohmic contacts to GaSb devices are presented.Keywords
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