Barrier tuning by means of a quantum, interface-induced dipole in a doping layer
- 9 October 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (15) , 1564-1566
- https://doi.org/10.1063/1.102245
Abstract
We consider a sharply defined doping layer near the interface of a heterostructure on the narrow-gap side. It is shown that an interface-induced dipole moment results, whose magnitude depends on the quantum spread of the electronic charge. The result of thermionic emission measurement of the barrier height is compared with a self-consistent, nonparabolic subband calculation.Keywords
This publication has 8 references indexed in Scilit:
- Subband physics for a “realistic” δ-doping layerSurface Science, 1988
- Effect of substrate temperature on migration of Si in planar-doped GaAsApplied Physics Letters, 1988
- Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensionsSemiconductor Science and Technology, 1988
- Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructuresApplied Physics A, 1988
- Optical determination of the AlxGa1-xAs energy gap variation versus the Al concentration in MBE-grown samplesSemiconductor Science and Technology, 1987
- Electron states in GaAs/Ga1−xAlxAs heterostructures: Nonparabolicity and spin-splittingSuperlattices and Microstructures, 1986
- Doping interface dipoles: Tunable heterojunction barrier heights and band-edge discontinuities by molecular beam epitaxyApplied Physics Letters, 1985
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979