Doping Characteristics of Gas-Source MBE-Grown n-AlxGa1-xAs (x=0-0.28) Doped Using Disilane
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11R)
- https://doi.org/10.1143/jjap.29.2386
Abstract
Si doping using uncracked disilane (Si2H6) in gas-source molecular beam epitaxy of n-Al x Ga1-x As (x=0-0.28) using triethyl gallium, triethyl aluminum, and arsine was studied in a carrier concentration from 5 × 1017 to 2 × 1018 cm-3. We found that (1) the Si atomic concentration of AlGaAs is proportional to the Si2H6 flow rate, and decreases with increasing Al content at a constant Si2H6 flow rate, and (2) the carrier concentration of AlGaAs shows a square-root dependence on the Si atomic concentration incorporated.Keywords
This publication has 14 references indexed in Scilit:
- Gaseous dopant sources in MOMBE/CBEJournal of Crystal Growth, 1990
- A Study of Cold Dopant Sources for Gas Source MBE: The use of Disilane as an N-Type Dopant of AlxGa1-xAs (x=0–0.28) and Trimethylgallium as a P-Type Dopant of GaAsJapanese Journal of Applied Physics, 1990
- Metalorganic gas control system for gas source molecular beam epitaxyJournal of Vacuum Science & Technology A, 1990
- Silicon doping using disilane in low-pressure OMVPE of GaAsJournal of Crystal Growth, 1987
- Doping of GaAs in metalorganic MBE using gaseous sourcesJournal of Crystal Growth, 1987
- In situ, real-time diagnostics of OMVPE using IR-diode laser spectroscopyJournal of Crystal Growth, 1986
- SiH4 doping of MBE GaAs and AlxGa1−xAsJournal of Vacuum Science & Technology B, 1985
- Silicon doping of GaAs and AlxGa1−xAs using disilane in metalorganic chemical vapor depositionJournal of Crystal Growth, 1984
- Metalorganic CVD of GaAs in a molecular beam systemJournal of Crystal Growth, 1981
- Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and PJournal of the Electrochemical Society, 1980