Morphological fluctuation and electrical properties of sputtered hydrogenated silicon
- 15 September 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (6) , 535-537
- https://doi.org/10.1063/1.93580
Abstract
Electrical properties and x-ray small angle scattering have been measured on rf-sputtered Si:H alloys deposited at various hydrogen partial pressures of argon and hydrogen mixture gas with a constant total pressure. When the hydrogen partial pressure exceeds 40%, microcrystalline zone of about 200 Å in diameter is formed and photoexcited carriers show nondispersive transport, instead of dispersive transport which is typical of rf-sputtered a-Si:H.Keywords
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