An improved dispersion relationship for the p-n junction avalanche diode
- 1 May 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 15 (5) , 282-289
- https://doi.org/10.1109/t-ed.1968.16179
Abstract
A tractable and more physically realistic dispersion relationship for the avalanche diode than previously available has been developed, This includes terms relating to the differences in hole and electron velocities and ionization coefficients. Analysis of this modified dispersion relation indicates new ranges for instabilities. Plots for selected cases are presented.Keywords
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