Some Observations of Large Imperfections in Highly Te-Doped GaAs Crystals
- 1 May 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (5)
- https://doi.org/10.1143/jjap.7.485
Abstract
Large imperfections in highly Te-doped, boat-grown GaAs crystals were studied by the combination of etching technique, X-ray anomalous transmission and X-ray microanalysis. Impurity inclusions were observed. X-ray microanalyses showed the presence of tellurium and gallium, and the absence of arsenic in the inclusion. X-ray topographs revealed extended and corrugated contrasts of an unknown defect in the bulk. These defect structures were correlated with the high doping level of tellurium.Keywords
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