Analysis of electrical characteristics of polycrystalline silicon thin-film transistors under static and dynamic conditions
- 30 September 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (9) , 1363-1369
- https://doi.org/10.1016/s0038-1101(97)00130-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Off-current in polycrystalline silicon thin film transistors: An analysis of the thermally generated componentSolid-State Electronics, 1995
- Determination of Crystallisation Parameters of a-Si from In Situ Conductance Measurements and Transmission Electron Microscopy AnalysisSolid State Phenomena, 1994
- Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET'sIEEE Transactions on Electron Devices, 1991
- Avalanche-induced effects in polysilicon thin-film transistorsIEEE Electron Device Letters, 1991
- Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film TransistorsJapanese Journal of Applied Physics, 1990
- Model for the above-threshold characteristics and threshold voltage in polycrystalline silicon transistorsJournal of Applied Physics, 1990
- New high field-effect mobility regimes of amorphous silicon alloy thin-film transistor operationJournal of Applied Physics, 1986
- A mobility model for carriers in the MOS inversion layerIEEE Transactions on Electron Devices, 1983
- Properties of ESFI MOS transistors due to the floating substrate and the finite volumeIEEE Transactions on Electron Devices, 1975