Localization of two-dimensional exciton polaritons
- 15 August 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 42 (5) , 2941-2950
- https://doi.org/10.1103/physrevb.42.2941
Abstract
The grating-coupler-induced emission and excitation of quantum-well-exciton polaritons (QWEP’s) in GaAs- As quantum wells (QW’s) and quantum-well wires (QWW’s) has been studied by photoluminescence (PL) and reflection spectroscopy. The QWEP excitations propagating perpendicular to the grating coupler are observed in PL on the high-energy side of the ground-state heavy-hole exciton transition as an additional strongly polarized signal with the electric field perpendicular to the grating direction. In the QWW the QWEP’s show, down to wire widths of =150 nm, a nearly free behavior, i.e., very similar to QWEP’s in QW systems. When decreasing the wire width below ≊150 nm the polariton-specific features disappear in the spectra, which we attribute to the localization of the QWEP’s. Below =100 nm, the concept of quasi-one-dimensional excitons is an appropriate model to describe the behavior of the observed transitions.
Keywords
This publication has 33 references indexed in Scilit:
- Polarization dependent absorption spectra in quantum wire structuresSuperlattices and Microstructures, 1988
- Band-mixing effects and excitonic optical properties in GaAs quantum wire structures-comparison with the quantum wellsIEEE Journal of Quantum Electronics, 1988
- Excitons in quantum boxes: Correlation effects and quantum confinementPhysical Review B, 1988
- Exciton binding energy in quantum-well wiresPhysical Review B, 1987
- Low-temperature photoluminescence from InGaAs/InP quantum wires and boxesApplied Physics Letters, 1987
- Exciton binding energy in a quantum-well wirePhysical Review B, 1987
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Optical spectroscopy of ultrasmall structures etched from quantum wellsApplied Physics Letters, 1986
- Spatial quantization in GaAs–AlGaAs multiple quantum dotsJournal of Vacuum Science & Technology B, 1986
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974