Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure
- 17 March 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (11) , 1447-1449
- https://doi.org/10.1063/1.118559
Abstract
InAs x Sb 1−x /InP 1−x−y As x Sb y double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results.Keywords
This publication has 8 references indexed in Scilit:
- Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1996
- InAsSb-based mid-infrared lasers (3.8–3.9 μm) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- 175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μmApplied Physics Letters, 1996
- Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μmApplied Physics Letters, 1996
- n-AlGaSb and GaSb/AlGaSb double-heterostructure lasers grown by organometallic vapor phase epitaxyApplied Physics Letters, 1996
- The growth of InP1-xSbx by metalorganic chemical vapor depositionJournal of Crystal Growth, 1993
- Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1−y molecular-beam epitaxial layersJournal of Applied Physics, 1993
- 3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxyApplied Physics Letters, 1991