The growth of InP1-xSbx by metalorganic chemical vapor deposition
- 1 October 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 133 (1-2) , 38-46
- https://doi.org/10.1016/0022-0248(93)90101-2
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Two-dimensional phase separation in epitaxial layersPhysical Review B, 1992
- 3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxyApplied Physics Letters, 1991
- Infrared magneto-optical and photoluminescence studies of the electronic properties of In(As,Sb) strained-layer superlatticesPhysical Review B, 1991
- Organometallic vapor phase epitaxial growth studies of GaP1−xSbx and InP1−xSbxJournal of Crystal Growth, 1989
- Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100)Applied Physics Letters, 1988
- Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVDJournal of Crystal Growth, 1988
- Organometallic vapor-phase epitaxial growth and characterization of the metastable alloy InP1−xSbxJournal of Applied Physics, 1988
- The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor depositionJournal of Crystal Growth, 1986
- OMVPE growth of GaAs1-xSbx: solid compositionJournal of Crystal Growth, 1983
- Miscibility gaps and spinodal decomposition in III/V quaternary alloys of the type A x B y C1−x−y DJournal of Applied Physics, 1983