Thin-Film Deposition of Cu2O by Reactive Radio-Frequency Magnetron Sputtering
- 1 August 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (8A) , L786
- https://doi.org/10.1143/jjap.39.l786
Abstract
Deposition conditions of cuprous oxide (Cu2O) thin films on glass substrates by reactive radio-frequency (rf) magnetron sputtering method were studied. The substrate temperature was found to be important for obtaining high-quality films, and the optimum substrate temperature was about 500°C. The Cu2O deposited at 500°C shows a band-gap energy of about 2.0 eV and a typical hole concentration of the order of 1015 cm-3 with a Hall mobility of 60 cm2/Vs, which is the highest mobility reported thus far.Keywords
This publication has 12 references indexed in Scilit:
- Novel Spray‐Pyrolysis Deposition of Cuprous Oxide Thin FilmsJournal of the American Ceramic Society, 1998
- Study of annealing effects of cuprous oxide grown by electrodeposition techniqueSolar Energy Materials and Solar Cells, 1996
- Electrical and Optical Properties of Copper Oxide Films Prepared by Reactive RF Magnetron SputteringPhysica Status Solidi (a), 1996
- Molecular beam epitaxy growth of CuO and Cu2O films with controlling the oxygen content by the flux ratio of Cu/O+Journal of Crystal Growth, 1994
- Deposition of copper oxide films by reactive laser ablation of copper formate in an r.f. oxygen plasma ambientThin Solid Films, 1994
- Cu2O solar cells: A reviewSolar Cells, 1988
- Photovoltaic effects in Cu2OCu solar cells grown by anodic oxidationSolid-State Electronics, 1982
- Heterojunction solar cells on cuprous oxideSolar Cells, 1981
- Photovoltaic effect in cuprous oxide-copper junctions in relation to the optical absorption spectrum of cuprous oxideSolid State Communications, 1981
- Properties of reactively-sputtered copper oxide thin filmsThin Solid Films, 1979