Joining and recrystallization of Si using the thermomigration process
- 1 February 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (2) , 1207-1210
- https://doi.org/10.1063/1.327689
Abstract
Thermomigration of Al‐rich liquid zones through Si is used to join single‐crystalline Si wafers and also to recrystallize polycrystalline Si into single‐crystalline material. Several possible applications of this technique are discussed.This publication has 8 references indexed in Scilit:
- Thermomigration of molten Ga in Si and GaAsJournal of Applied Physics, 1977
- Thermomigration processing of isolation grids in power structuresIEEE Transactions on Electron Devices, 1976
- High-speed droplet migration in siliconJournal of Applied Physics, 1976
- Deep-diode arraysJournal of Applied Physics, 1976
- Spreading resistance correction factorsSolid-State Electronics, 1969
- Self-diffusion in liquid metalsAdvances in Physics, 1967
- Growth of α-SiC Single Crystals from Chromium SolutionJournal of the Electrochemical Society, 1964
- Crystal Growth of GaAs from Ga by a Traveling Solvent MethodJournal of Applied Physics, 1963