Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates

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Abstract
The electron beam induced current (EBIC) technique was used for characterization of novel GaAs quantum nanostructures based on potential modulation of two-dimensional electron gas (2DEG) by Schottky in-plane gates (IPGs). A simple theory on the EBIC signal from the basic Schottky IPG structure was developed and it was compared to experimental results. Excellent agreement between theoretical and experimental results was obtained, indicating that the EBIC technique is a powerful means to detect electric field profiles in depletion layers of quantum nanostructures. The EBIC technique was also applied to Schottky IPG-based quantum wires, lateral superlattices and multi-quantum dot chains. The EBIC study revealed that effective potential control and electron confinement can be achieved by suitable design of Schottky IPG electrodes.

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