The impact of electron transport regimes on the linearity of AlGaAs/n+-InGaAs HFETs
- 1 January 1993
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (1) , 53-60
- https://doi.org/10.1016/0038-1101(93)90068-2
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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