A pseudomorphic AlGaAs/n/sup +/-InGaAs metal-insulator-doped channel FET for broad-band, large-signal applications
- 1 August 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (8) , 436-438
- https://doi.org/10.1109/55.119157
Abstract
Molecular beam epitaxy (MBE)-grown L/sub g/=1.7- mu m pseudomorphic Al/sub 0.38/Ga/sub 0.62/As/n/sup +/-In/sub 0.15/Ga/sub 0.85/As metal-insulator-doped channel FETs (MIDFETs) are presented that display extremely broad plateaus in both f/sub T/ and f/sub max/ versus V/sub GS/, with f/sub T/ sustaining 90% of its peak over a gate swing of 2.6 V. Drain current is highly linear with V/sub GS/ over this swing, reaching 514 mA/mm. No frequency dispersion in g/sub m/ up to 3 GHz was found, indicating the absence of electrically active traps in the undoped AlGaAs pseudoinsulator layer. These properties combine to make the pseudomorphic MIDFET highly suited to linear, large-signal, broadband applications.Keywords
This publication has 12 references indexed in Scilit:
- AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistorsIEEE Transactions on Electron Devices, 1990
- Characteristics of GaAs/AlGaAs-doped channel MISFET's at cryogenic temperaturesIEEE Electron Device Letters, 1990
- Threshold current reduction in patterned quantum well semiconductor lasers grown by molecular beam epitaxyApplied Physics Letters, 1990
- Millimeter-wave power operation of an AlGaAs/InGaAs/GaAs quantum well MISFETIEEE Transactions on Electron Devices, 1989
- Bias dependence of f/sub T/ and f/sub max/ in an In/sub 0.52/Al/sub 0.48/As/n/sup +/-In/sub 0.53/Ga/sub 0.47/As MISFETIEEE Electron Device Letters, 1988
- Thermal conversion and hydrogenation effects in AlGaAsJournal of Applied Physics, 1988
- Investigation of influence of DX centres on HEMT operation at room temperatureElectronics Letters, 1988
- Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistorsIEEE Transactions on Electron Devices, 1986
- Concentration of electrons in selectively doped GaAlAs/GaAs heterojunction and its dependence on spacer-layer thickness and gate electric fieldApplied Physics Letters, 1984
- Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAsJournal of Applied Physics, 1983