Thermal conversion and hydrogenation effects in AlGaAs
- 1 September 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (5) , 2772-2774
- https://doi.org/10.1063/1.341627
Abstract
Thermal conversion of molecular-beam epitaxially (MBE) grown AlGaAs from semi-insulating to p-type caused by annealing has been studied using Hall-effect and photoluminescence measurements. The presence of C impurities causes thermal conversion of the AlGaAs layers. A key observation is that residual C impurities can be greatly reduced by increasing growth temperature. Thermodynamic evaluation of adsorption kinetics suggests that C incorporation during AlGaAs MBE is chemisorptive. The effects of hydrogenation in MBE AlGaAs have also been studied and indicate that thermally activated C acceptors and nonradiative recombination centers can be passivated with this treatment.This publication has 8 references indexed in Scilit:
- Thermal conversion of AlxGa1−xAs layers grown by molecular beam epitaxyApplied Physics Letters, 1987
- Hydrogen passivation of C acceptors in high-purity GaAsApplied Physics Letters, 1987
- Passivation of Si donors and D X centers in AlGaAs by hydrogen plasma exposureApplied Physics Letters, 1987
- Molecular beam epitaxial growth of high-purity AlGaAsApplied Physics Letters, 1987
- An Indium-Free MBE Growth of AlGaAs/GaAs HBTsJapanese Journal of Applied Physics, 1987
- High-purity GaAs grown by molecular-beam epitaxyJournal of Applied Physics, 1986
- Hydrogen passivation of shallow-acceptor impurities inp-type GaAsPhysical Review B, 1986
- Photoluminescence of shallow acceptors in Al0.28Ga0.72AsJournal of Applied Physics, 1983