Thermal conversion of AlxGa1−xAs layers grown by molecular beam epitaxy
- 19 October 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (16) , 1265-1267
- https://doi.org/10.1063/1.98700
Abstract
We report the observation of thermal conversion of AlxGa1−xAs alloys grown by molecular beam epitaxy (MBE) from undoped, high‐resistivity AlxGa1−xAs to low‐resistivity, p‐type material after annealing beyond the growth temperature (∼650 °C). The phenomenon occurs only in the Al‐containing layers and not in the GaAs. Electrical measurements indicate that a substantial concentration of residual C acceptors causes the thermal conversion of the AlxGa1−xAs layers. A possible mechanism of C incorporation during MBE is examined from a thermodynamical point of view.Keywords
This publication has 7 references indexed in Scilit:
- Molecular beam epitaxial growth of high-purity AlGaAsApplied Physics Letters, 1987
- Fabrication and characterization of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1987
- Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAsJapanese Journal of Applied Physics, 1985
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Photoluminescence of shallow acceptors in Al0.28Ga0.72AsJournal of Applied Physics, 1983
- Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxyJournal of Applied Physics, 1982
- Spherical Model of Shallow Acceptor States in SemiconductorsPhysical Review B, 1973