Effects of In Doping on Cr-Related Luminescence in GaAs

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Abstract
We have investigated effects of In doping on the Cr-related luminescence lines in In, Cr-codoped GaAs and observed for the first time new Cr-related luminescence lines in addition to the well-known Cr–VAS zero-phonon line. The peak position of the Cr–VAS line in GaAs:In:Cr shifts slightly towards the lower-energy side and the half width is about five times broader than in the normal GaAs:Cr. These Cr-related luminescence lines have not been observed for GaAs:Al:Cr. Analysis of a series of the results of luminescence measurements for GaAs:In:Cr shows these newly observed Cr-related luminescence lines to be originated from a complex involving a Cr–VAS pair influenced by the existence of In in the second-nearest neighbors of the Cr atom in GaAs.