UHF Film Resonator Evaluation and Resonator-Controlled Oscillator and Filter Design Using Computer-Aided Design Techniques
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 85 (0149645X) , 239-242
- https://doi.org/10.1109/mwsym.1985.1131951
Abstract
RF magnetron-sputtered piezoelectric films on silicon semiconductor substrates provide the basis for high Q, temperature-stable, bulk acoustic resonators in monolithic, UHF signal processing circuits. This paper describes the design of UHF oscillators using such resonators as the frequency-controlling elements. RF circuit analysis/optimization software has been used for determining resonator equivalent electrical circuit parameters and oscillator sustaining-stage optimum small-signal impedance characteristics, based on automated measurement of resonator and transistor S-parameters. Oscillator circuits have been designed for potential implementation using silicon and GaAs technology. A prototype oscillator has been fabricated that is realizable in monolithic form and allows resonator utilization as a one port. Measurement of oscillator output-signal phase-noise sideband spectra indicates achievement of L(f) = -110 dB/Hz at 1 kHz carrier offset frequency.Keywords
This publication has 6 references indexed in Scilit:
- Composite Thin Film UHF Bulk Acoustic Wave Resonators on GaAsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- Zero Temperature Coefficient SAW Delay Line on AlN Epitaxial FilmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- Low-temperature coefficient bulk acoustic wave composite resonatorsApplied Physics Letters, 1982
- Acoustic bulk wave composite resonatorsApplied Physics Letters, 1981
- Fundamental-mode VHF/UHF minature acoustic resonators and filters on siliconApplied Physics Letters, 1980
- Low-temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputteringApplied Physics Letters, 1980