Growth of GaAs on Si Substrates by Metalorganic MBE Using Triethylgallium and Arsenic
- 1 May 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (5A) , L727
- https://doi.org/10.1143/jjap.28.l727
Abstract
GaAs layers are epitaxially grown on (100) Si substrates by metalorganic MBE (MOMBE) using triethylgallium and solid arsenic. All epilayers show p-type conductivity caused by carbon incorporation. The reproducibly obtained single-domain GaAs epilayers have almost featureless morphology. The X-ray diffraction measurements indicate that the MOMBE-grown layer is of high crystalline quality. The 4 K photoluminescence spectrum exhibits a strong, excitonic transition peak with a linewidth of 4.9 meV. These results can compete with those reported previously for the MOCVD-grown GaAs on Si.Keywords
This publication has 11 references indexed in Scilit:
- Heteroepitaxy of GaAs on Si: The effect of i n s i t u thermal annealing under AsH3Applied Physics Letters, 1988
- Stability of 300 K continuous operation of p-n AlxGa1−xAs-GaAs quantum well lasers grown on SiApplied Physics Letters, 1987
- Photoluminescence Study of GaAs Grown Directly on Si SubstratesJapanese Journal of Applied Physics, 1987
- Growth of high quality GaAs layers directly on Si substrate by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1987
- Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on SiSolid State Communications, 1986
- Chemical beam epitaxy of InGaAsJournal of Applied Physics, 1985
- Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- MBE Growth of High-Quality InP Using Triethylindium as an Indium SourceJapanese Journal of Applied Physics, 1984
- GaAs light-emitting diodes fabricated on Ge-coated Si substratesApplied Physics Letters, 1984
- Metalorganic CVD of GaAs in a molecular beam systemJournal of Crystal Growth, 1981