MBE Growth of High-Quality InP Using Triethylindium as an Indium Source
- 1 September 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (9A) , L737
- https://doi.org/10.1143/jjap.23.l737
Abstract
High-quality InP is grown on (100) InP substrates by molecular beam epitaxy using triethylindium and red phosphorus. Introduction of hydrogen during growth is found to be effective in improving crystal quality. Epitaxial layers are n-type and the highest achieved 77 K mobility is 32000 cm2v-1s-1 with a carrier concentration of 8.7×1014 cm-3.Keywords
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