Low-field transient behavior of MNOS devices
- 1 February 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (2) , 664-666
- https://doi.org/10.1063/1.322630
Abstract
Evidence for the transition from Fowler‐Nordheim injection to a trap‐assisted tunneling mechanism in thin oxide MNOS devices under low applied voltages has been found from transient measurements. The agreement between theoretical prediction and experimental results is very good.This publication has 6 references indexed in Scilit:
- Simple technique for determination of centroid of nitride charge in MNOS structuresApplied Physics Letters, 1975
- Electron and hole transport in CVD Si3N4 filmsApplied Physics Letters, 1975
- Trap-assisted charge injection in MNOS structuresJournal of Applied Physics, 1973
- Low-field tunnelling current in thin-oxide m.n.o.s. memory transistorsElectronics Letters, 1973
- Tunneling to traps in insulatorsJournal of Applied Physics, 1972
- Properties of MNOS structuresIEEE Transactions on Electron Devices, 1972