Statistical interpolation of FET data base measurements
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 201-204 vol.1
- https://doi.org/10.1109/mwsym.1991.146962
Abstract
Research into valid and compact statistical FET models is described. A statistical interpolation technique that extends the truth model proposed by J. Purviance et al. (1990) is presented. The truth model simply uses samples from a FET measurement database when performing statistical analysis and design of circuits. The statistical interpolation technique presented multiplies the number of points within a statistical database by interpolating among the measurements in a statistically valid manner. It lends itself easily to software implementation and gives results that are better than those obtained using other available simulation models. The statistical interpolation technique has been developed and validated using 179 GaAs FETs.Keywords
This publication has 7 references indexed in Scilit:
- Statistical techniques for objective characterization of microwave device statistical dataPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Properties of FET parameter statistical data basesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A linear statistical FET model using principal component analysisIEEE Transactions on Microwave Theory and Techniques, 1989
- Circuit optimization: the state of the artIEEE Transactions on Microwave Theory and Techniques, 1988
- A survey of optimization techniques for integrated-circuit designProceedings of the IEEE, 1981
- Variable Kernel Estimates of Multivariate DensitiesTechnometrics, 1977
- An Algorithm for Finding Nearest NeighborsIEEE Transactions on Computers, 1975