Deuteron beam analysis of rapid thermal nitridation of silicon and thin SiO2 films
- 1 February 1992
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 64 (1) , 778-783
- https://doi.org/10.1016/0168-583x(92)95577-e
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Dielectric breakdown in thin Si oxynitride films produced by rapid thermal processingApplied Physics Letters, 1990
- Effects of post-nitridation anneals on radiation hardness in rapid thermal nitrided gate oxidesApplied Physics Letters, 1989
- Characterization of 30 nm nitrided oxides fabricated by rapid thermal nitridationApplied Surface Science, 1989
- Rapid thermal nitridation of SiO2 filmsApplied Surface Science, 1989
- Rapid isothermal processingJournal of Applied Physics, 1988
- Interface states and fixed charges in nanometer-range thin nitrided oxides prepared by rapid thermal annealingIEEE Electron Device Letters, 1986
- Rapid thermal nitridation of SiO2 for nitroxide thin dielectricsApplied Physics Letters, 1985
- Thermal nitridation of Si and SiO2for VLSIIEEE Transactions on Electron Devices, 1985
- Nitridation of Silicon and Oxidized‐SiliconJournal of the Electrochemical Society, 1982
- Thermal Nitridation of Silicon in Ammonia Gas: Composition and Oxidation Resistance of the Resulting FilmsJournal of the Electrochemical Society, 1979