Effect of chemical state of doped Sn on the electrical properties of sputtered ITO films
- 1 January 1990
- Vol. 41 (4-6) , 1463-1465
- https://doi.org/10.1016/0042-207x(90)93991-q
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Properties of highly conducting ITO films prepared by ion platingApplied Surface Science, 1988
- Characterization and estimation of ito (indium-tin-oxide) by Mössbauer spectrometryHyperfine Interactions, 1988
- Hyperfine characterization of tin-doped indium sesquioxideHyperfine Interactions, 1985
- Properties of tin doped indium oxide thin films prepared by magnetron sputteringJournal of Applied Physics, 1983
- Electrical and optical properties of In2O3: Sn films prepared by activated reactive evaporationThin Solid Films, 1980