Gain characteristics of GaN quantum wells includingmany body effects
- 6 July 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (14) , 1149-1150
- https://doi.org/10.1049/el:19950826
Abstract
The authors have calculated the gain-current characteristics for a 70 Å GaN-Al0.14Ga0.86N quantum well and show that the inclusion of Coulomb enhancement increases the current at a given gain by ~50%, and has an effect on the predicted laser wavelength.Keywords
This publication has 6 references indexed in Scilit:
- Qualitative estimation of optical gain in wide-band-gap semiconductor quantum wellsJournal of Applied Physics, 1994
- Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopyApplied Physics Letters, 1994
- Gain-current characteristics of strained AlGaInP quantum well lasersApplied Physics Letters, 1993
- Line broadening due to carrier-carrier scattering in quantum well heterostructuresSemiconductor Science and Technology, 1993
- Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wellsApplied Physics Letters, 1990
- Band mixing effects on quantum well gainIEEE Journal of Quantum Electronics, 1987