Qualitative estimation of optical gain in wide-band-gap semiconductor quantum wells

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Abstract
Room‐temperature linear optical gain of a GaN quantum well is estimated qualitatively and is compared with optical gains of the ZnSe and GaAs quantum wells in order to examine the feasibility of GaN quantum‐well lasers. Our analysis is based on the simple model using the density matrix method with parabolic band approximation. For 100 Å quantum wells, the calculated transparency level of a GaN quantum well (8.3×1018 cm−3) is slightly higher than that of a ZnSe structure (7.4×1018 cm−3). But the transparency levels of GaN and ZnSe quantum wells are much higher than the transparency level of a GaAs quantum well (2.3×1018 cm−3). It is expected that gain spectra of a GaN quantum well be narrower than those of a ZnSe quantum well.