Improvement of the growth of InxGa1−xAs on GaAs (001) using Te as surfactant
- 5 July 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (1) , 66-68
- https://doi.org/10.1063/1.110770
Abstract
It is demonstrated by using reflection high‐energy electron diffraction and transmission electron microscopy that the epitaxial growth of highly strained InxGa1−xAs (x≳0.3) layers on GaAs(001) is improved by a preadsorbed Te surfactant layer. The formation of 3D islands is inhibited by the surfactant action and consequently the onset of plastic relaxation (i.e., the critical thickness) is significantly delayed.Keywords
This publication has 13 references indexed in Scilit:
- Grandjean and Massies replyPhysical Review Letters, 1993
- Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layersPhysical Review Letters, 1992
- Surfactant mediated epitaxial growth of InxGa1−xAs on GaAs (001)Applied Physics Letters, 1992
- Photoluminescence of virtual-surfactant grown InAs/Al0.48In0.52As single quantum wellsApplied Physics Letters, 1992
- Characterization of interfacial topography in lattice strained InxGa1−xAs/GaAs heterostructures by the weak beam imaging techniquePhilosophical Magazine A, 1991
- Temperature-dependent critical layer thickness for In0.36Ga0.64As/GaAs single quantum wellsApplied Physics Letters, 1991
- Critical-thickness and growth-mode transitions in highly strained In_{x}Ga_{1-x}As filmsPhysical Review Letters, 1991
- Microstructure and strain relief of Ge films grown layer by layer on Si(001)Physical Review B, 1990
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974