Photoluminescence of virtual-surfactant grown InAs/Al0.48In0.52As single quantum wells
- 8 June 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (23) , 2877-2879
- https://doi.org/10.1063/1.106805
Abstract
Strained InAs/Al0.48In0.52As single quantum wells (QWs) grown by solid-source molecular beam epitaxy on InP substrates are studied by photoluminescence spectroscopy. The thickness of the InAs QW lies between 2 and 16 monolayers, corresponding to an intrinsic emission wavelength between 0.9 and 1.8 μm at 6 K. We demonstrate that the growth of the InAs QW under virtual-surfactant conditions, i.e., by keeping the As shutter closed throughout the growth of the well, gives a striking improvement of the optical properties, as compared to conventionally grown samples. Finally, we report on the first room-temperature luminescence of this QW system.Keywords
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